Sato T, Nakayama K, Sekiba Y, Richard P, Xu Y-M, Souma S, Takahashi T, Chen G F, Luo J L, Wang N L, Ding H
Department of Physics, Tohoku University, Sendai 980-8578, Japan and TRiP, Japan Science and Technology Agency (JST), Kawaguchi 332-0012, Japan.
Phys Rev Lett. 2009 Jul 24;103(4):047002. doi: 10.1103/PhysRevLett.103.047002. Epub 2009 Jul 23.
We have performed high-resolution angle-resolved photoemission spectroscopy on heavily overdoped KFe_{2}As_{2} (transition temperature T_{c} = 3 K). We observed several renormalized bands near the Fermi level with a renormalization factor of 2-4. While the Fermi surface around the Brillouin-zone center is qualitatively similar to that of optimally doped Ba_{1-x}K_{x}Fe_{2}As_{2} (x = 0.4; T_{c} = 37 K), the Fermi surface topology around the zone corner (M point) is markedly different: the two electron Fermi surface pockets are completely absent due to an excess of hole doping. This result indicates that the electronic states around the M point play an important role in the high-T_{c} superconductivity of Ba_{1-x}K_{x}Fe_{2}As_{2} and suggests that the interband scattering via the antiferromagnetic wave vector essentially controls the T_{c} value in the overdoped region.
我们对严重过掺杂的KFe₂As₂(转变温度Tc = 3 K)进行了高分辨率角分辨光电子能谱实验。我们在费米能级附近观测到了几个重整化能带,重整化因子为2至4。虽然布里渊区中心附近的费米面在定性上与最佳掺杂的Ba₁₋ₓKₓFe₂As₂(x = 0.4;Tc = 37 K)相似,但区角(M点)附近的费米面拓扑结构却明显不同:由于空穴掺杂过量,两个电子费米面口袋完全消失。这一结果表明,M点附近的电子态在Ba₁₋ₓKₓFe₂As₂的高温超导中起着重要作用,并表明通过反铁磁波矢的带间散射在过掺杂区域中基本控制着Tc值。