Zhao Linlin, Da Wang, Huang Qingzhen, Wu Hui, Sun Ruijin, Fan Xiao, Song Yanpeng, Jin Shifeng, Chen Xiaolong
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Phys Rev B. 2019 Mar;99(9). doi: 10.1103/PhysRevB.99.094503.
Here we report on the structural and electronic phase diagram of lithium and ethylenediamine intercalated FeSe in a wide range of dopant concentration . Undoped crystallizes in an orthorhombic phase. With increasing lithium doping, an orthorhombic to tetragonal phase transition occurs at , and the superconducting tetragonal phase persists until . Meanwhile, the is found dependent strongly on dopant concentration, raising rapidly from 30 K at to 45 K at . The crystal structures of are determined by using high-resolution neutron diffraction data at 5, 60, 150, and 295 K, respectively. The distortion of the FeSe tetrahedron is enhanced significantly from 150 to 295 K, meanwhile, the normal-state Hall resistivity changes sign from negative to positive in the same temperature range. The dominant hole carrier in electron-doped above 230 K suggests that the temperature-induced structure distortion may lead to a reconstruction of the Fermi surface topology and the appearance of hole pockets.
在此,我们报告了在广泛的掺杂剂浓度范围内,锂和乙二胺插层的FeSe的结构和电子相图。未掺杂的样品结晶为正交相。随着锂掺杂量的增加,在 时发生从正交相到四方相的转变,超导四方相一直持续到 。同时,发现 强烈依赖于掺杂剂浓度,从 时的30 K迅速升至 时的45 K。分别使用在5、60、150和295 K下的高分辨率中子衍射数据确定了 的晶体结构。从150 K到295 K,FeSe四面体的畸变显著增强,同时,在相同温度范围内,正常态霍尔电阻率从负变为正。在230 K以上的电子掺杂 中,主要的空穴载流子表明温度诱导的结构畸变可能导致费米面拓扑结构的重构和空穴口袋的出现。