Lin S S, Song J H, Lu Y F, Wang Z L
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
Nanotechnology. 2009 Sep 9;20(36):365703. doi: 10.1088/0957-4484/20/36/365703. Epub 2009 Aug 18.
Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS.
基于对n型纳米线（NWs）和n核/p壳纳米线的压电输出的比较研究，以及之前的研究（Lu等人，2009年，《纳米快报》9卷，1223页），我们展示了一种一步法技术，可基于压电纳米发电机的输出识别单个ZnO纳米线（NWs）的导电类型，而不会破坏样品。负的压电输出电压表明纳米线是n型的，且在尖端扫描过纳米线中心后出现，而正的输出电压则表明是p型导电，且在尖端扫描过纳米线中心线之前出现。这种基于原子力显微镜的技术对于统计绘制ZnO纳米线阵列中的多数载流子类型是可靠的。该技术也可应用于其他纤锌矿半导体，如GaN、CdS和ZnS。
