Kuo Chien-Lin, Wang Ruey-Chi, Huang Jow-Lay, Liu Chuan-Pu, Wang Chun-Kai, Chang Sheng-Po, Chu Wen-Huei, Wang Chao-Hung, Tu Chia-Hao
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
Nanotechnology. 2009 Sep 9;20(36):365603. doi: 10.1088/0957-4484/20/36/365603. Epub 2009 Aug 18.
Vertically aligned large-area p-Cu(2)O/n-AZO (Al-doped ZnO) radial heterojunction nanowire arrays were synthesized on silicon without using catalysts in thermal chemical vapor deposition followed by e-beam evaporation. Scanning electron microscopy and high-resolution transmission electron microscopy results show that poly-crystalline Cu(2)O nano-shells with thicknesses around 10 nm conformably formed on the entire periphery of pre-grown Al:ZnO single-crystalline nanowires. The Al doping concentration in the Al:ZnO nanowires with diameters around 50 nm were determined to be around 1.19 at.% by electron energy loss spectroscopy. Room-temperature photoluminescence spectra show that the broad green bands of pristine ZnO nanowires were eliminated by capping with Cu(2)O nano-shells. The current-voltage (I-V) measurements show that the p-Cu(2)O/n-AZO nanodiodes have well-defined current rectifying behavior. This paper provides a simple method to fabricate superior p-n radial nanowire arrays for developing nano-pixel optoelectronic devices and solar cells.
通过热化学气相沉积法在不使用催化剂的情况下于硅上合成了垂直排列的大面积p-Cu₂O/n-AZO（铝掺杂氧化锌）径向异质结纳米线阵列，随后进行电子束蒸发。扫描电子显微镜和高分辨率透射电子显微镜结果表明，厚度约为10 nm的多晶Cu₂O纳米壳层在预生长的Al:ZnO单晶纳米线的整个周边上均匀形成。通过电子能量损失谱测定，直径约为50 nm的Al:ZnO纳米线中的铝掺杂浓度约为1.19原子百分比。室温光致发光光谱表明，用Cu₂O纳米壳层包覆后，原始ZnO纳米线的宽绿带消失。电流-电压（I-V）测量表明，p-Cu₂O/n-AZO纳米二极管具有明确的电流整流行为。本文提供了一种简单的方法来制备用于开发纳米像素光电器件和太阳能电池的优质p-n径向纳米线阵列。
