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使用基于聚(N-异丙基丙烯酰胺)的温敏光致抗蚀剂的环保光刻技术。

Environment-friendly photolithography using poly(N-isopropylacrylamide)-based thermoresponsive photoresists.

机构信息

Max-Planck-Institute of Molecular Cell Biology and Genetics, Pfotenhauer Str. 108, 01307 Dresden, Germany.

出版信息

J Am Chem Soc. 2009 Sep 23;131(37):13315-9. doi: 10.1021/ja902660s.

Abstract

We report a novel approach for the temperature-triggered development of water-soluble photoresists based on photocleavable poly(N-isopropylacrylamide) copolymers. These copolymers are soluble in an aqueous environment below their Lower Critical Solution Temperature (LCST). Upon UV irradiation, the photocleavable groups are deprotected resulting in an increased LCST. Thus, the illuminated parts of spin-coated copolymer layers dissolve at higher temperatures than the surrounding areas, leading to pattern development. The photoresist can finally be completely removed at low temperature. We demonstrate the applicability of this novel photolithographic approach by the patterning of fluorescent proteins.

摘要

我们报告了一种基于光可裂解聚(N-异丙基丙烯酰胺)共聚物的温度触发水溶性光致抗蚀剂的新型开发方法。这些共聚物在低于其低临界溶液温度(LCST)的水相环境中是可溶的。在紫外光照射下,光可裂解基团被去保护,导致 LCST 增加。因此,旋涂共聚物层的被照射部分在较高温度下溶解,从而形成图案。光致抗蚀剂最终可以在低温下完全去除。我们通过荧光蛋白的图案化证明了这种新型光刻方法的适用性。

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