基于场效应晶体管（FET）的光电传感器，其利用光系统I的双组分，用于成像设备。
Photosensor based on an FET utilizing a biocomponent of photosystem I for use in imaging devices.
作者信息
Terasaki Nao, Yamamoto Noritaka, Hattori Mineyuki, Tanigaki Nobutaka, Hiraga Takashi, Ito Kohsuke, Konno Masae, Iwai Masako, Inoue Yasunori, Uno Sigeyasu, Nakazato Kazuo
机构信息
National Institute of Advanced Industrial Science and Technology (AIST), Measurement Solution Research Center,807-1 Shuku-machi, Tosu, Saga 841-0052, Japan.
出版信息
Langmuir. 2009 Oct 6;25(19):11969-74. doi: 10.1021/la901091e.
We have investigated a photosensor that consists of a field emission transistor (FET) utilizing the biocomponent of the photosystem I (PSI) protein complex for use in an imaging device. The PSI was immobilized on a gold electrode via the self-assembling monolayer (SAM) of 3-mercapto-1-propanesulfonic acid sodium salt to obtain a PSI-modified gold electrode. As for the PSI-modified gold electrode, the basic photoresponses originating from the excitation of PSI, including the photocurrent (106 nA) and the photoresponse of the open-circuit voltage (photo-Voc: 28.6 mV), were characterized. Then, the PSI-modified gold electrode was linked to the gate of the FET using a lead line, and the device was successfully driven by the photoelectric signals from the PSI like a voltage follower circuit. Further, we successfully demonstrated that the PSI-based FET acts as a photosensor in imaging devices.
我们研究了一种光电传感器，它由一个场发射晶体管（FET）组成，该晶体管利用光系统I（PSI）蛋白质复合物的双组分用于成像设备。通过3-巯基-1-丙烷磺酸钠的自组装单分子层（SAM）将PSI固定在金电极上，以获得PSI修饰的金电极。对于PSI修饰的金电极，表征了源自PSI激发的基本光响应，包括光电流（106 nA）和开路电压的光响应（光生Voc：28.6 mV）。然后，使用引线将PSI修饰的金电极连接到FET的栅极，并且该器件像电压跟随器电路一样由来自PSI的光电信号成功驱动。此外，我们成功证明了基于PSI的FET在成像设备中充当光电传感器。
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