Wan Lei, Yang XiaoMin
Seagate Research Center, 1251 Waterfront Place, Pittsburgh, Pennsylvania 15222, USA.
Langmuir. 2009 Nov 3;25(21):12408-13. doi: 10.1021/la901648y.
We demonstrate a method, employing prepatterns based on hydrogen silsesquioxane (HSQ) resist, for fabricating highly dense dot arrays of perpendicular block copolymer (BCP) cylinders with improved quality or increased density multiplication factors compared to conventional SiO(x)-based chemical prepatterns (dot arrays of exposed SiO(x) surfaces surrounded by polystyrene (PS) brush matrix). Due to the higher quality and simpler preparation procedures, HSQ-based chemical prepatterns were able to induce better BCP patterns, including nearly perfectly ordered and well registered arrays of perpendicular poly(styrene-b-dimethylsiloxane) (P(S-b-DMS)) cylinders. On prepatterns with identical chemical properties and patterning features, graphoepitaxy can induce higher density multiplication than chemical prepatterning.
我们展示了一种方法，该方法采用基于氢倍半硅氧烷（HSQ）抗蚀剂的预图案，用于制造垂直嵌段共聚物（BCP）圆柱体的高密度点阵列，与传统的基于SiO(x)的化学预图案（由聚苯乙烯（PS）刷基质包围的暴露SiO(x)表面的点阵列）相比，其质量得到改善或密度倍增因子增加。由于更高的质量和更简单的制备程序，基于HSQ的化学预图案能够诱导出更好的BCP图案，包括几乎完美有序且良好对齐的垂直聚（苯乙烯-b-二甲基硅氧烷）（P(S-b-DMS)）圆柱体阵列。在具有相同化学性质和图案特征的预图案上，图形外延比化学预图案化能诱导更高的密度倍增。
