Materials Theory and Simulation, Institute of High Performance Computing, 138632, Singapore.
Nanotechnology. 2009 Nov 4;20(44):445709. doi: 10.1088/0957-4484/20/44/445709. Epub 2009 Oct 7.
The effects of surface morphology on polarization switching in thin ferroelectric films are investigated using a real-space, time-dependent Ginzburg-Landau model that incorporates electrostatic interactions. We consider a two-dimensional uni-axial ferroelectric film with a thickness that varies sinusoidally. Polarization switching, starting from a single domain remnant state, is simulated for several surface modulation amplitudes and wavelengths. We demonstrate that surface heterogeneities produce inhomogeneities in the electric field within the film. These inhomogeneities become preferential sites for easy nucleation of reverse domains. This has a profound effect on the external field necessary to switch the polarization. Increasing the surface undulation amplitude significantly reduces the coercive field compared to the ideal flat film, even for very small amplitude modulations in the thickness. Although surface roughness decreases the field required to form reverse domains, it also hinders subsequent domain wall migration. In fact, for very high amplitude and small wavelength surface morphologies, complete switching to a single domain state becomes impossible. This is because the domain walls become trapped near the peaks in the modulated surface. The technological implications of the present results for utilization of surface roughness and for surface morphology design are discussed.
利用包含静电相互作用的实空间、时变的扩展朗道-吉尔伯特模型研究了表面形态对铁电薄膜中极化反转的影响。我们考虑了厚度呈正弦变化的二维单轴铁电薄膜。针对几个表面调制幅度和波长,对从单个畴剩余状态开始的极化反转进行了模拟。我们证明,表面不均匀性会在薄膜内产生电场的不均匀性。这些不均匀性成为易反转畴成核的优先位置。这对反转极化所需的外场有深远的影响。与理想的平面薄膜相比,增加表面起伏幅度会显著降低矫顽场,即使在薄膜厚度的振幅调制非常小的情况下也是如此。尽管表面粗糙度降低了形成反转畴所需的场,但它也阻碍了后续畴壁迁移。事实上,对于非常高的幅度和小波长的表面形态,完全切换到单畴状态是不可能的。这是因为畴壁在调制表面的峰值附近被捕获。讨论了本研究结果对利用表面粗糙度和表面形态设计的技术意义。