Suchaneck Gunnar, Vidyarthi Vinay S, Gerlach Gerald, Solnyshkin Alexander V, Kislova Inna L
Solid State Electronics Lab, Technische Universität Dresden, Dresden, Germany.
IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Dec;54(12):2555-61. doi: 10.1109/TUFFC.2007.576.
In this work, a ferroelectric domain-enhanced electron emission mechanism is proposed. The polarization distribution near 90 degrees domain walls is calculated by solving a set of second order differential equations, including the Poisson's one and equations derived from an expansion of the free energy Phi(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excite trapped excess electrons in front of the wall.
在这项工作中，提出了一种铁电畴增强电子发射机制。通过求解一组二阶微分方程来计算90度畴壁附近的极化分布，这些方程包括泊松方程以及根据德文希尔-朗道-金兹堡理论由自由能Phi(P)按极化幂级数展开导出的方程。与发射表面相交的畴壁会产生足够的电场并降低电子发射的势垒。这会诱导增强电子发射的中心。发现弛豫畴壁会激发壁前捕获的过量电子。
