Suppr超能文献

利用 STEM-EELS 对 BaTiO(3) 薄膜中的刃型位错核心进行局域分析。

Local analysis of the edge dislocation core in BaTiO(3) thin film by STEM-EELS.

机构信息

Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.

出版信息

J Microsc. 2009 Nov;236(2):128-31. doi: 10.1111/j.1365-2818.2009.03265.x.

Abstract

The a <100> edge dislocation core formed in an epitaxial BaTiO(3) (BTO) thin film grown on a substrate was investigated by scanning transmission electron microscopy combined with electron energy-loss spectroscopy. Elemental analysis using core-loss spectrum indicates that the atomic ratios of O/Ti and Ba/Ti are decreased at the dislocation core. The near-edge fine structure of the oxygen K-edge recorded from the dislocation core differs slightly from that of relaxed BTO region, which suggests that Ba-O bonding is decreased at the dislocation core. The structure of the dislocation core is discussed using a high-angle annular dark-field image and the electron energy-loss spectroscopy results.

摘要

采用扫描透射电子显微镜结合电子能量损失谱研究了外延在基底上的 BaTiO3(BTO)薄膜中形成的 a <100> 位错核心。利用芯损失谱进行的元素分析表明,位错核心处的 O/Ti 和 Ba/Ti 原子比降低。从位错核心记录的氧 K 边近边缘精细结构与弛豫 BTO 区域略有不同,这表明位错核心处的 Ba-O 键合减少。使用高角环形暗场图像和电子能量损失谱结果讨论了位错核心的结构。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验