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锗单原子层的水相电沉积。

Aqueous electrodeposition of Ge monolayers.

机构信息

Department of Chemistry, The University of Georgia, Athens, Georgia 30602, USA.

出版信息

Langmuir. 2010 Feb 16;26(4):2877-84. doi: 10.1021/la902929j.

DOI:10.1021/la902929j
PMID:19904953
Abstract

The electrodeposition of germanium on Au(111) in aqueous solutions has been investigated by means of cyclic voltammetry, Auger electron spectroscopy, and in situ scanning tunneling microscopy (STM). The data yield a picture of germanium deposition, which starts with the formation of two well-ordered hydroxide phases, with 1/3 ML and 4/9 ML coverages upon initial reduction of the Ge(IV) species (probably H(2)GeO(3) at pH 4.7). Those structures appear to result from a three-electron reduction to form surface-limited structures with (square root(3) x square root(3))R30 degrees or (3 x 3) unit cells, respectively. Further reduction, probably in a two-electron process from the hydroxide structures, resulted in a germanium hydride structure, again surface-limited, with a coverage of close to 0.8 ML. The hydride structure is very flat, though with the periodic modulation characteristic of a Moiré pattern. Longer deposition times and lower potentials resulted in increased coverage of Ge in some cases, but with apparently limited coverage as a function of pH. The maximum Ge coverage, about 4 ML, was observed using a pH 9.32 deposition solution. At potentials negative of the Moiré pattern, about -850 mV versus Ag/AgCl, a "corruption" of the smooth Moiré pattern occurred. This roughening appears to mark the initial formation of a Au-Ge alloy, accounting for the observation of coverage in excess of that needed to form the Moiré pattern at some pH values.

摘要

在水溶液中,通过循环伏安法、俄歇电子能谱和原位扫描隧道显微镜(STM)研究了锗在 Au(111) 上的电沉积。数据提供了锗沉积的图像,该沉积始于两种有序的氢氧化物相的形成,初始还原 Ge(IV) 物种(可能在 pH 4.7 时为 H(2)GeO(3))时,其覆盖度分别为 1/3 ML 和 4/9 ML。这些结构似乎是由三电子还原形成的,形成表面受限结构,分别具有 (sqrt(3) x sqrt(3))R30 度或 (3 x 3) 单位细胞。进一步的还原,可能是从氢氧化物结构的两电子过程,导致锗氢化物结构,再次是表面受限的,覆盖度接近 0.8 ML。尽管具有莫尔图案的周期性调制特征,但氢化物结构非常平坦。在某些情况下,较长的沉积时间和较低的电势会导致 Ge 覆盖率增加,但随着 pH 值的增加,覆盖率似乎有限。使用 pH 9.32 的沉积溶液观察到最大 Ge 覆盖率约为 4 ML。在 Moiré 图案负电位下,约 -850 mV 相对于 Ag/AgCl,光滑的 Moiré 图案发生“腐蚀”。这种粗糙化似乎标志着 Au-Ge 合金的初始形成,这解释了在某些 pH 值下观察到超过形成 Moiré 图案所需的覆盖率的原因。

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