Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstrasse 2, D-30167 Hannover, Germany.
Phys Rev Lett. 2009 Oct 2;103(14):146402. doi: 10.1103/PhysRevLett.103.146402. Epub 2009 Sep 30.
We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells.
我们从理论上预测,受激激子-激子散射会对半导体发光产生强烈影响。在部分自旋极化激子简并气体中,受激散射会导致双激子发射线产生圆偏振发光,而不是非偏振发光。双激子极化效应随激子密度的增加和温度的降低而增加,并在玻色-爱因斯坦凝聚的极限情况下接近 1。时间和偏振分辨的发光测量在 ZnSe 和 GaAs 量子阱中都证明了双激子极化效应。