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使用近场微波显微镜研究BiFeO₃薄膜的高频介电特性分布

High frequency dielectric properties distribution of BiFeO3 thin film using near-field microwave microscopy.

作者信息

Zhang Xiao-Yu, Wang Xuan-Cong, Xu Feng, Ma Yun-Gui, Ong C K

机构信息

Temasek Laboratories, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore.

出版信息

Rev Sci Instrum. 2009 Nov;80(11):114701. doi: 10.1063/1.3258201.

Abstract

A near-field scanning microwave microscopy (NSMM) is applied to investigate the local perpendicular dielectric information of single-phase multiferroic BiFeO(3) thin film and single crystal LaAlO(3) material. Our NSMM is composed of a vector network analyzer and a simple open-ended coaxial probe, which is quite different from the commercial probe with a lambda/4 coaxial resonator. The local permittivity is calculated quantitatively according to resonance frequency shift under the quasistatic microwave perturbation theory. We make use of the magnitude of reflection loss S(11) to construct an image reflecting the distribution of dielectric constant of a material. A homogeneous permittivity is observed in LaAlO(3) material and the inhomogeneous permittivity epsilon=215-250 for BiFeO(3) film is depicted from the change of feedback signal S(11) over an area of 100x100 microm(2).

摘要

应用近场扫描微波显微镜(NSMM)来研究单相多铁性BiFeO(3)薄膜和单晶LaAlO(3)材料的局部垂直介电信息。我们的NSMM由矢量网络分析仪和一个简单的开放式同轴探头组成,这与带有λ/4同轴谐振器的商业探头有很大不同。根据准静态微波微扰理论,通过共振频率偏移定量计算局部介电常数。我们利用反射损耗S(11)的大小来构建反映材料介电常数分布的图像。在LaAlO(3)材料中观察到均匀的介电常数,并且从反馈信号S(11)在100×100微米(2)区域内的变化描绘出BiFeO(3)薄膜的不均匀介电常数ε = 215 - 250。

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