Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106, USA.
ACS Nano. 2009 Dec 22;3(12):4023-32. doi: 10.1021/nn901222t.
The inhomogeneity of as-grown single-walled carbon nanotubes (SWCNTs), in terms of chiral structure, is a major obstacle to integration of these novel materials in advanced electronics. While separation methods have circumvented this problem, current synthesis approaches must be refined for large-scale production of SWCNTs with uniform properties. In addition, it is highly desirable to alter the initial chirality distribution which constrains fundamental study and applications. Here, we demonstrate that semiconducting SWCNTs are selectively produced in the gas phase by engineering catalysts at the nanoscale with precise size and composition. The semiconducting content in as-grown mixtures of SWCNTs is assessed by UV-visible-NIR absorbance and micro-Raman spectroscopy and reaches a maximum purity of 90% for samples catalyzed by Ni(0.27)Fe(0.73) nanoparticles (2.0 nm mean diameter). Electrical studies are performed on thin film transistors (TFTs) fabricated from as-grown SWCNTs and reveal high on/off current ratios of 10(3).
生长的单壁碳纳米管(SWCNTs)在手性结构方面的不均匀性是将这些新型材料集成到先进电子设备中的主要障碍。虽然分离方法已经规避了这个问题,但目前的合成方法必须加以改进,以便大规模生产具有均匀性能的 SWCNTs。此外,改变限制基础研究和应用的初始手性分布是非常可取的。在这里,我们证明通过纳米尺度的催化剂工程,可以在气相中选择性地生产半导体 SWCNTs,其具有精确的尺寸和组成。通过紫外-可见-近红外吸收和微拉曼光谱评估生长混合物中 SWCNTs 的半导体含量,用 Ni(0.27)Fe(0.73)纳米颗粒(平均直径 2.0nm)催化的样品达到了 90%的最大纯度。对由生长的 SWCNTs 制成的薄膜晶体管(TFT)进行了电研究,结果表明导通/关断电流比高达 10(3)。