Jen Yi-Jun, Lakhtakia Akhlesh, Yu Ching-Wei, Chan Tzu-Yi
Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan.
J Opt Soc Am A Opt Image Sci Vis. 2009 Dec;26(12):2600-6. doi: 10.1364/JOSAA.26.002600.
A normalized admittance diagram assists in describing and designing multilayered structures to excite long-range surface-plasmon-polariton (LRSPP) waves of either the p- or the s-polarization state. These structures comprise symmetric periodic multilayers on one or both sides of a metal thin film in either the Kretschmann or the Sarid configuration. The normalized admittance diagram even assists in designing structures that can be used to excite LRSPP waves of both polarization states simultaneously.
归一化导纳图有助于描述和设计多层结构，以激发p偏振态或s偏振态的长程表面等离激元极化激元（LRSPP）波。这些结构包括处于Kretschmann或Sarid配置的金属薄膜一侧或两侧的对称周期性多层结构。归一化导纳图甚至有助于设计可用于同时激发两种偏振态的LRSPP波的结构。
