Patskovsky Sergiy, Song In-Hyouk, Meunier Michel, Kabashin Andrei V
Engineering Physics Department, Ecole Polytechnique de Montréal, C. P. 6079, succ. Centre-Ville, Montréal, Québec, Canada.
Opt Express. 2009 Nov 9;17(23):20847-52. doi: 10.1364/OE.17.020847.
Si-based total internal reflection (TIR) bio/chemical sensor presents an attractive alternative to Surface Plasmon Resonance (SPR) technology due to a relatively simple optical arrangement and technological implementation, as well as a relatively easy bio/chemical immobilization on Si/SiO(2) surface with a number of novel attractive applications. This sensor is based on the control of phase difference between p- and s-polarized components of light reflected from Si/air or Si/water interface in TIR geometry and a high sensitivity of the sensor is granted by a high refractive index of Si (3.56 at 1200 nm). We study properties of TIR sensors in a configuration of spectral phase detection and identify conditions of maximal phase sensitive response. We also experimentally show that the detection limit of Si-based TIR sensor can be lowered down to a level of detection of commercially available SPR devices (10(-6) Refractive Index Units, RIU) under the use of a proper low-noisy method of the phase control. The concept of Si-based TIR opens attractive prospects for the miniaturization of sensor devices, taking advantage of the advanced state of development of Si-based microfabrication technologies, while the proposed spectral phase detection scheme offers much easier packaging and calibration steps.
基于硅的全内反射(TIR)生物/化学传感器由于其相对简单的光学布置和技术实现方式,以及在Si/SiO₂表面相对容易进行生物/化学固定并具有许多新颖且有吸引力的应用,为表面等离子体共振(SPR)技术提供了一种有吸引力的替代方案。这种传感器基于在全内反射几何结构中控制从Si/空气或Si/水界面反射的光的p偏振和s偏振分量之间的相位差,并且由于硅的高折射率(1200nm时为3.56)赋予了传感器高灵敏度。我们研究了光谱相位检测配置下TIR传感器的特性,并确定了最大相位敏感响应的条件。我们还通过实验表明,在使用适当的低噪声相位控制方法时,基于硅的TIR传感器的检测限可以降低到市售SPR设备的检测水平(10⁻⁶折射率单位,RIU)。基于硅的全内反射概念利用硅基微加工技术的先进发展状态,为传感器设备的小型化开辟了有吸引力的前景,而所提出的光谱相位检测方案提供了更容易的封装和校准步骤。