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单个静电门控过渡金属配合物中自旋态的电操控。

Electrical manipulation of spin states in a single electrostatically gated transition-metal complex.

机构信息

Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, The Netherlands.

出版信息

Nano Lett. 2010 Jan;10(1):105-10. doi: 10.1021/nl9029785.

Abstract

We demonstrate an electrically controlled high-spin (S = 5/2) to low-spin (S = 1/2) transition in a three-terminal device incorporating a single Mn(2+) ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the terpyridine moiety and thereby strengthen the ligand-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model.

摘要

我们展示了一种三端设备中的电控制高自旋(S=5/2)到低自旋(S=1/2)的转变,该设备包含一个由两个三吡啶配体配位的单个 Mn(2+)离子。通过调整栅极电压,我们降低了三吡啶部分,从而增强了 Mn 原子上的配体场。添加一个电子会稳定低自旋构型,相应的顺序隧道电流会被自旋阻塞抑制。从低温非弹性共隧道光谱中,我们推断出分子的磁激发谱,并在低自旋侧发现强烈依赖栅极的单重态-三重态劈裂。测量的偏压光谱与 Mn 配合物的精确对角化一致,并且数据的解释是基于简化的有效模型给出的。

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