Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada.
Nanotechnology. 2010 Jan 29;21(4):045602. doi: 10.1088/0957-4484/21/4/045602. Epub 2009 Dec 10.
A detailed continuum model is presented for predicting the growth characteristics of GaAs nanowires during chemical beam epitaxy. The model describes the transport processes of Ga and As adatoms on the substrate and nanowire sidewalls, and through the nanoparticle and the nanowire-catalyst interface (NCI). The growth mechanisms of nanowires within the NCI are described using an extended step-flow kinetic model. The vapor-liquid-solid and vapor-solid-solid growth mechanisms are both described in the kinetic model. The growth rate of the nanowires, the surface and bulk concentrations of adatoms, and the role of transport processes of Ga and As adatoms during chemical beam epitaxy were investigated. The growth mechanisms of the nanowires were found to vary with increasing length of the nanowire.
提出了一种详细的连续统模型，用于预测化学束外延过程中 GaAs 纳米线的生长特性。该模型描述了 Ga 和 As 原子在衬底和纳米线侧壁上的输运过程，以及通过纳米颗粒和纳米线-催化剂界面（NCI）的输运过程。通过扩展的阶跃流动力学模型描述了 NCI 内纳米线的生长机制。动力学模型中描述了汽-液-固和汽-固-固生长机制。研究了纳米线的生长速率、原子的表面和体浓度，以及 Ga 和 As 原子在化学束外延过程中的输运过程的作用。发现纳米线的生长机制随着纳米线长度的增加而变化。
