Physics Department, University of Bologna, Bologna, Italy.
Nanotechnology. 2010 Jan 29;21(4):045702. doi: 10.1088/0957-4484/21/4/045702. Epub 2009 Dec 10.
Hydrogenated nanocrystalline silicon (nc-Si:H) is a multiphase, heterogeneous material, composed of Si nanocrystals embedded in an amorphous matrix. It has been intensively studied in the last few years due to its great promise for photovoltaic and optoelectronics applications. The present paper aims to study the current transport mechanisms in nc-Si:H by mapping the local conductivity at the nanoscale. The role of B doping in nc-Si:H is also investigated. Conductivity maps are obtained by atomic force microscopy using a conductive tip. Differences and similarities between intrinsic and doped nc-Si:H conductivity maps were observed and these are also explained on the basis of recently published computational studies.
氢化纳米晶硅（nc-Si:H）是一种多相、不均匀的材料，由嵌入非晶基质中的 Si 纳米晶体组成。由于其在光伏和光电应用方面的巨大潜力，近年来人们对其进行了深入研究。本文旨在通过在纳米尺度上绘制局部电导率来研究 nc-Si:H 中的电流传输机制。还研究了 B 掺杂在 nc-Si:H 中的作用。通过原子力显微镜使用导电尖端获得电导率图。观察到本征和掺杂 nc-Si:H 电导率图之间的差异和相似之处，并根据最近发表的计算研究对这些差异进行了解释。
