Department of Chemistry, the Materials Research Center, and the Argonne Northwestern Solar Energy Research Institute, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA.
Langmuir. 2010 Feb 16;26(4):2584-91. doi: 10.1021/la902879h.
In studies to simplify the fabrication of bulk-heterojunction organic photovoltaic (OPV) devices, it was found that when glass/tin-doped indium oxide (ITO) substrates are treated with dilute aqueous HCl solutions, followed by UV ozone (UVO), and then used to fabricate devices of the structure glass/ITO/P3HT:PCBM/LiF/Al, device performance is greatly enhanced. Light-to-power conversion efficiency (Eff) increases from 2.4% for control devices in which the ITO surface is treated only with UVO to 3.8% with the HCl + UVO treatment--effectively matching the performance of an identical device having a PEDOT:PSS anode interfacial layer. The enhancement originates from increases in V(OC) from 463 to 554 mV and FF from 49% to 66%. The modified-ITO device also exhibits a 4x enhancement in thermal stability versus an identical device containing a PEDOT:PSS anode interfacial layer. To understand the origins of these effects, the ITO surface is analyzed as a function of treatment by ultraviolet photoelectron spectroscopy work function measurements, X-ray photoelectron spectroscopic composition analysis, and atomic force microscopic topography and conductivity imaging. Additionally, a diode-based device model is employed to further understand the effects of ITO surface treatment on device performance.
在简化体异质结有机光伏（OPV）器件制造的研究中，发现当玻璃/掺锡氧化铟（ITO）基底用稀盐酸溶液处理，然后用紫外臭氧（UVO）处理，然后用于制造结构为玻璃/ITO/P3HT：PCBM/LiF/Al 的器件时，器件性能得到了极大的提高。光到电的转换效率（Eff）从仅用 UVO 处理的对照器件的 2.4%增加到用 HCl+UVO 处理的 3.8%——有效地与具有 PEDOT：PSS 阳极界面层的相同器件的性能相匹配。增强源自 V(OC)从 463 到 554 mV 的增加和 FF 从 49%到 66%的增加。与含有 PEDOT：PSS 阳极界面层的相同器件相比，改性 ITO 器件的热稳定性也提高了 4 倍。为了了解这些效应的起源，通过紫外光电子能谱功函数测量、X 射线光电子能谱成分分析和原子力显微镜形貌和导电性成像对 ITO 表面进行了分析。此外，采用基于二极管的器件模型进一步理解 ITO 表面处理对器件性能的影响。
