National Institute for Nanotechnology, National Research Council, Edmonton, AB, Canada.
Nanotechnology. 2011 Feb 25;22(8):085706. doi: 10.1088/0957-4484/22/8/085706. Epub 2011 Jan 18.
Using high surface area nanostructured electrodes in organic photovoltaic (OPV) devices is a route to enhanced power conversion efficiency. In this paper, indium tin oxide (ITO) and hybrid ITO/SiO(2) nanopillars are employed as three-dimensional high surface area transparent electrodes in OPVs. The nanopillar arrays are fabricated via glancing angle deposition (GLAD) and electrochemically modified with nanofibrous PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(p-styrenesulfonate)). The structures are found to have increased surface area as characterized by porosimetry. When applied as anodes in polymer/fullerene OPVs (architecture: commercial ITO/GLAD ITO/PEDOT:PSS/P3HT:PCBM/Al, where P3HT is 2,5-diyl-poly(3-hexylthiophene) and PCBM is [6,6]-phenyl-C(61)-butyric acid methyl ester), the air-processed solar cells incorporating high surface area, PEDOT:PSS-modified ITO nanoelectrode arrays operate with improved performance relative to devices processed identically on unstructured, commercial ITO substrates. The resulting power conversion efficiency is 2.2% which is a third greater than for devices prepared on commercial ITO. To further refine the structure, insulating SiO(2) caps are added above the GLAD ITO nanopillars to produce a hybrid ITO/SiO(2) nanoelectrode. OPV devices based on this system show reduced electrical shorting and series resistance, and as a consequence, a further improved power conversion efficiency of 2.5% is recorded.
在有机光伏（OPV）器件中使用高表面积纳米结构电极是提高功率转换效率的一种途径。本文采用氧化铟锡（ITO）和混合 ITO/SiO2纳米柱作为三维高表面积透明电极应用于 OPV 中。纳米柱阵列通过掠角沉积（GLAD）制备，并用电化学方法将纳米纤维PEDOT:PSS（聚（3,4-亚乙基二氧噻吩）：聚（对苯乙烯磺酸盐））修饰。通过压汞法对结构进行了表征，发现其比表面积增加。当将其用作聚合物/富勒烯 OPV 的阳极（结构：商业 ITO/GLAD ITO/PEDOT:PSS/P3HT:PCBM/Al，其中 P3HT 是 2,5-二（3-己基噻吩）-聚（3-己基噻吩）和 PCBM 是[6,6]-苯基-C（61）-丁酸甲酯）时，与在无结构的商业 ITO 基底上进行相同处理的器件相比，空气处理的包含高表面积、PEDOT:PSS 修饰的 ITO 纳米电极阵列的太阳能电池具有改进的性能。所得的功率转换效率为 2.2%，比在商业 ITO 上制备的器件提高了三分之一。为了进一步优化结构，在 GLAD ITO 纳米柱上方添加绝缘 SiO2帽，以制备混合 ITO/SiO2纳米电极。基于该系统的 OPV 器件显示出降低的电短路和串联电阻，因此，记录到功率转换效率进一步提高到 2.5%。
