采用超高电压硬质阳极氧化法制备新型 AAO 薄膜和中空纳米结构。
Novel AAO films and hollow nanostructures fabricated by ultra-high voltage hard anodization.
机构信息
Department of Electronic Materials Science and Engineering, College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, People's Republic of China.
出版信息
Chem Commun (Camb). 2010 Jan 14;46(2):309-11. doi: 10.1039/b914703a. Epub 2009 Nov 25.
DOI:10.1039/b914703a
PMID:20024361
Abstract
Novel anodic aluminium oxide (AAO) films and hollow nanostructures were synthesized via a simple electrochemical and chemical etching route; fluctuating nanotube growth inside AAO film fabricated under ultra-high voltage was considered to be the main reason for the formation of such new structures.
摘要
通过简单的电化学和化学刻蚀路线合成了新型阳极氧化铝（AAO）薄膜和中空纳米结构；在超高压下制备的 AAO 薄膜内的纳米管生长波动被认为是形成这种新结构的主要原因。
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