硅上电沉积铂纳米簇：HF 浓度的影响及其作为硅纳米线生长催化剂的应用。
Galvanic deposition of Pt clusters on silicon: effect of HF concentration and application as catalyst for silicon nanowire growth.
机构信息
Department of Chemical Engineering, University of California at Berkeley, Berkeley, California 94720, USA.
出版信息
Langmuir. 2010 Jan 5;26(1):432-7. doi: 10.1021/la902032x.
We report on the galvanic deposition of Pt on Si from solutions containing PtCl(2) and different concentrations of HF. The results show that for low [HF]/[Pt] ratios (<or=26), only a thin layer of PtSi is formed. The deposition rate of Pt increases with [HF] in the plating solution, up to [HF]/[Pt] approximately 530; after this ratio, the morphology of the Pt film changes: larger clusters are formed, which cover the Si substrate less densely. Detailed atomic force microscopy and X-ray photoelectron spectroscopy analyses show that the deposited Pt layers do not completely cover the Si substrate. The Pt and PtSi films formed are able to catalyze the formation of Si nanowires (Si NWs) arrays formed via vapor-liquid-solid (VLS) process. By changing the immersion time in the Pt plating solution, Si NWs arrays with different density, diameter, and orientation are obtained.
我们报告了从含有 PtCl(2) 和不同浓度 HF 的溶液中在 Si 上进行 Pt 的电沉积。结果表明，对于低 [HF]/[Pt] 比（<或=26），仅形成一层薄的 PtSi。Pt 的沉积速率随电镀液中 HF 的增加而增加，最高可达 [HF]/[Pt] 约为 530；在此比值之后，Pt 膜的形态发生变化：形成较大的团簇，它们对 Si 衬底的覆盖不那么密集。详细的原子力显微镜和 X 射线光电子能谱分析表明，沉积的 Pt 层并未完全覆盖 Si 衬底。形成的 Pt 和 PtSi 薄膜能够催化通过汽液固（VLS）过程形成的 Si 纳米线（Si NWs）阵列。通过改变在 Pt 电镀溶液中的浸泡时间，可以获得具有不同密度、直径和取向的 Si NWs 阵列。
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