Wang Yuhui, Liu Wei, Li Chen, Jiang Lan, Hu Jie, Ma Yunlong, Wang Suocheng
Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology Beijing 100081 China
RSC Adv. 2020 Dec 9;10(71):43432-43437. doi: 10.1039/d0ra03059g. eCollection 2020 Nov 27.
Control of the deposition location and morphology of metals on semiconductors is of considerable importance for the fabrication of metal-semiconductor hybrid structures. For this purpose, selective nanoscale deposition of gold on silicon was successfully achieved by a two-step method in this paper. The first preparation step comprises the fabrication of ripples with a femtosecond laser. The second preparation step is to immerse the samples in a mixed aqueous solution of hydrofluoric acid (HF) and chloroauric acid (HAuCl). The periodically ablated ripple structures on silicon surfaces fabricated by the femtosecond laser changed the physical and chemical properties of silicon and then controlled the nucleation positions of gold nanoparticles. Gold particles tend to grow in raised positions of the ripples and no substantial growth was observed in the recesses of the ablated ripple structures. Similar phenomena were observed on the modified ripple structures; this led to the formation of periodically distributed gold sub-micron wires. Above all, this paper proposes a new mask-free method of selective metal electroless deposition that can be realized without complicated experimental equipment and tedious experimental operations.
控制金属在半导体上的沉积位置和形态对于金属-半导体混合结构的制造具有相当重要的意义。为此，本文通过两步法成功实现了金在硅上的选择性纳米级沉积。第一步制备步骤包括用飞秒激光制造波纹。第二步制备步骤是将样品浸入氢氟酸（HF）和氯金酸（HAuCl）的混合水溶液中。飞秒激光在硅表面制备的周期性烧蚀波纹结构改变了硅的物理和化学性质，进而控制了金纳米颗粒的成核位置。金颗粒倾向于在波纹的凸起位置生长，而在烧蚀波纹结构的凹陷处未观察到大量生长。在改性波纹结构上也观察到了类似现象；这导致形成了周期性分布的金亚微米线。最重要的是，本文提出了一种新的无掩膜选择性金属化学沉积方法，该方法无需复杂的实验设备和繁琐的实验操作即可实现。
