National Creative Research Initiative Center for Semiconductor Nanorods and Department of Materials Science and Engineering, POSTECH, Pohang, Gyeongbuk 790-784, Korea.
Nanotechnology. 2010 Feb 5;21(5):055303. doi: 10.1088/0957-4484/21/5/055303. Epub 2010 Jan 6.
We studied the fabrication and field-emission characteristics of position-controlled AlN/ZnO nanotube heterostructure arrays. AlN layers with various thicknesses from 20 to 52 nm were deposited coaxially on the position-controlled ZnO nanotube arrays. The field-emission properties of the coaxial AlN/ZnO nanotube arrays were controlled using the AlN thickness and the nanotube interdistance. As compared to the bare ZnO nanotube arrays, the AlN-coated coaxial nanotube arrays exhibited enhanced electron emission, and the optimum AlN coating layer thickness on the nanotube tips was 26 nm. The improved field emission from the coaxial nanotube heterostructures is attributed to the low electron affinity and the thickness modulation effect of the AlN coating layer.
我们研究了位置控制的 AlN/ZnO 纳米管异质结构阵列的制备和场发射特性。在位置控制的 ZnO 纳米管阵列上同轴沉积了厚度从 20 到 52nm 的各种 AlN 层。通过 AlN 厚度和纳米管间隔来控制同轴 AlN/ZnO 纳米管阵列的场发射性能。与裸 ZnO 纳米管阵列相比，AlN 涂层同轴纳米管阵列表现出增强的电子发射，纳米管尖端的最佳 AlN 涂层厚度为 26nm。同轴纳米管异质结构的改进场发射归因于 AlN 涂层的低电子亲和势和厚度调制效应。
Zotero 插件