Kim Jimyung, Delfyett Peter J
College of Optics & Photonics: CREOL & FPCE, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816, USA.
Opt Express. 2009 Dec 7;17(25):22566-70. doi: 10.1364/OE.17.022566.
The spectral dependence of the linewidth enhancement factor above threshold is experimentally observed from a quantum dot Fabry-Pérot semiconductor laser. The linewidth enhancement factor is found to be reduced when the quantum dot laser operates approximately 10 nm offset to either side of the gain peak. It becomes significantly reduced on the anti-Stokes side as compared to the Stokes side. It is also found that the temporal duration of the optical pulses generated from quantum dot mode-locked lasers is shorter when the laser operates away from the gain peak. In addition, less linear chirp is impressed on the pulse train generated from the anti-Stokes side whereas the pulses generated from the gain peak and Stokes side possess a large linear chirp. These experimental results imply that enhanced performance characteristics of quantum dot lasers can be achieved by operating on the anti-Stokes side, approximately 10 nm away from the gain peak.
通过量子点法布里-珀罗半导体激光器,实验观测到了阈值以上线宽增强因子的光谱依赖性。发现当量子点激光器在增益峰值两侧大约10纳米处偏移工作时,线宽增强因子会降低。与斯托克斯侧相比,在反斯托克斯侧它会显著降低。还发现当量子点锁模激光器远离增益峰值工作时,其产生的光脉冲的时间持续时间更短。此外,从反斯托克斯侧产生的脉冲序列上施加的线性啁啾较少,而从增益峰值和斯托克斯侧产生的脉冲具有较大的线性啁啾。这些实验结果表明,通过在反斯托克斯侧、距增益峰值约10纳米处工作,可以实现量子点激光器性能的增强。