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用于提取线宽增强因子的量子点半导体激光器的四波混频分析

Four-wave mixing analysis of quantum dot semiconductor lasers for linewidth enhancement factor extraction.

作者信息

Lin Chih-Hao, Lin Hung-Hsin, Lin Fan-Yi

机构信息

Institute of Photonics Technologies, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.

出版信息

Opt Express. 2012 Jan 2;20(1):101-10. doi: 10.1364/OE.20.000101.

DOI:10.1364/OE.20.000101
PMID:22274333
Abstract

We apply a four-wave mixing analysis on a quantum dot laser to simultaneously obtain the linewidth enhancement factor α and other intrinsic laser parameters. By fitting the experimentally obtained regenerative signals and power spectra at different detuning frequencies with the respective curves analytically calculated from the rate equations, parameters including the linewidth enhancement factor, the carrier decay rate in the dots, the differential gain, and the photon decay rate can be determined all at once under the same operating conditions. In this paper, a theoretical model for the four-wave mixing analysis of the QD lasers is derived and verified. The sensitivity and accuracy of the parameter extraction using the four-wave mixing method are presented. Moreover, how each each parameters alter the shapes of the regenerative signals and the power spectra are also discussed.

摘要

我们对量子点激光器应用四波混频分析,以同时获得线宽增强因子α和其他固有激光参数。通过将实验获得的不同失谐频率下的再生信号和功率谱与从速率方程解析计算出的相应曲线进行拟合,可以在相同的工作条件下一次性确定包括线宽增强因子、量子点中的载流子衰减率、微分增益和光子衰减率在内的参数。本文推导并验证了用于量子点激光器四波混频分析的理论模型。给出了使用四波混频方法提取参数的灵敏度和准确性。此外,还讨论了各个参数如何改变再生信号和功率谱的形状。

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Opt Express. 2012 Jan 2;20(1):101-10. doi: 10.1364/OE.20.000101.
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引用本文的文献

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Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking.利用光注入锁定对纳米结构半导体激光器中谱线增宽因子进行热不敏感测定。
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