InGaN单量子阱光致发光中的瞬态记忆效应。

Transient memory effect in the photoluminescence of InGaN single quantum wells.

作者信息

Feldmeier Christian, Abiko Masayoshi, Schwarz Ulrich T, Kawakami Yoichi, Micheletto Ruggero

机构信息

Yokohama City University, Graduate School of Nanobioscience, Department of Nanosystem Science, 22-2 Seto Kanazawa-ku, 236-0027 Yokohama, Japan.

出版信息

Opt Express. 2009 Dec 7;17(25):22855-60. doi: 10.1364/OE.17.022855.

DOI:10.1364/OE.17.022855

PMID:20052211

Abstract

The transition to maximum photoluminescence of InGaN single quantum wells is a phenomena that has time constants in the range of few seconds. Using a systematic illumination/darkening procedure we found that these characteristics are related to previous stimulations as if the sample has a memory of past illumination events. Choosing opportune time sequences, time constants were observed to vary more than 100%. These facts suggest the presence of carrier trapping/de-trapping processes that act beyond the single illumination event, accumulating over time in a complex effect.

摘要

InGaN单量子阱向最大光致发光的转变是一种时间常数在几秒范围内的现象。通过系统的光照/暗化过程，我们发现这些特性与先前的刺激有关，就好像样品对过去的光照事件有记忆一样。选择合适的时间序列，观察到时间常数变化超过100%。这些事实表明存在载流子俘获/去俘获过程，这些过程在单个光照事件之外起作用，随着时间的推移累积产生复杂的效应。