Materials Engineering, The University of Queensland, St Lucia, QLD, Australia.
Nanotechnology. 2010 Feb 10;21(6):065701. doi: 10.1088/0957-4484/21/6/065701. Epub 2010 Jan 8.
Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon (111) wafers by a facile evaporation-condensation approach. These ZnS nanowire arrays possess predominant field emission properties with a low turn-on field of 2.9 V microm(-1), a low threshold field of 4.25 V microm(-1), a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (approximately 0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed to their specific crystallographic feature-array structures with nanotips and high single crystallinity. These results suggest that such ZnS nanowire arrays can be used as building blocks for field emitters.
纤锌矿结构的硫化锌（ZnS）纳米线阵列通过简单的蒸发-冷凝方法在硅（111）衬底上合成。这些 ZnS 纳米线阵列具有优异的场发射性能，开启电场低至 2.9 V µm-1，阈值电场低至 4.25 V µm-1，场增强因子高（超过 2700），稳定性好，波动小（约 0.8%）。这些 ZnS 纳米线阵列具有特定的晶体学特征-纳米尖端的阵列结构和高的单晶度，这使得其场发射性能得到了改善。这些结果表明，这种 ZnS 纳米线阵列可以用作场发射体的构建块。
