Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain.
Chemistry. 2010 Feb 22;16(8):2442-52. doi: 10.1002/chem.200901628.
Topological analyses of the theoretically calculated electron densities for a large set of 163 hydrogen-bonded complexes show that HX interactions can be classified in families according to X (X=atom or pi orbital). Each family is characterised by a set of intrinsic dependencies between the topological and energetic properties of the electron density at the hydrogen-bond critical point, as well as between each of them and the bonding distance. Comparing different atom-acceptor families, these dependencies are classified as a function of the van der Waals radius r(X) or the electronegativity chi(X), which can be explained in terms of the molecular orbitals involved in the interaction. According to this ordering, the increase of chi(X) leads to a larger range of HX distances for which the interaction is of pure closed-shell type. Same dependencies observed for HO interactions experimentally characterised by means of high-resolution X-ray diffraction data show a good agreement with those obtained from theoretical calculations, in spite of a larger dispersion of values around the expected fitting functions in the experimental case. Theoretical dependencies can thus be applied to the analysis of the experimental electron density for detecting either unconventional hydrogen bonds or problems in the modelling of the experimental electron density.
对一大组 163 个氢键复合物的理论计算电子密度进行拓扑分析表明,HX 相互作用可以根据 X(X=原子或π轨道)分类为家族。每个家族的特点是氢键临界点处电子密度的拓扑和能量性质之间以及它们彼此之间存在一系列固有依赖性,以及与键距之间的依赖性。比较不同的原子受体家族,这些依赖性根据范德华半径 r(X)或电负性 chi(X)进行分类,这可以根据参与相互作用的分子轨道来解释。根据这种排序,chi(X)的增加导致 HX 距离的范围更大,其中相互作用是纯闭壳型的。通过高分辨率 X 射线衍射数据实验表征的 HO 相互作用观察到的相同依赖性与从理论计算中获得的依赖性非常吻合,尽管在实验情况下,围绕预期拟合函数的值存在较大的分散。因此,理论依赖性可用于分析实验电子密度,以检测非常规氢键或实验电子密度建模中的问题。