Hoffman R A, Lange W J, Choyke W J
Appl Opt. 1975 Aug 1;14(8):1803-7. doi: 10.1364/AO.14.001803.
The change in absorptivity at 10.6 microm of copper samples, at various stages of polishing including ion polishing, is reported. The ion polishing apparatus is also described; it employs a low energy Xe ion beam incident at a glancing angle to maximize the removal rate while minimizing ion penetration and damage. The sample to be polished is rotated and the beam scanned across the surface to produce uniform removal of material. Starting with single crystal copper that had been mechanically polished and by using combinations of ion polishing and vacuum annealing, the absorptivity, determined by calorimetry, was reduced from 0.92% to 0.76%. Although optical figure and scatter were not monitored, SEM pictures show that the surface features become smoother with ion polishing. A similar experiment was performed on a single crystal copper sample that had been electropolished, and the combination of ion polishing and annealing lowered the absorptivity from 0.97% to 0.89%.
报告了包括离子抛光在内的不同抛光阶段铜样品在10.6微米处吸收率的变化情况。文中还描述了离子抛光设备；该设备采用低能量Xe离子束以掠射角入射，以在使离子穿透和损伤最小化的同时最大化去除率。待抛光的样品会旋转，离子束会扫描整个表面以实现材料的均匀去除。从经过机械抛光的单晶铜开始，通过结合离子抛光和真空退火，通过量热法测定的吸收率从0.92%降至0.76%。尽管未监测光学平整度和散射情况，但扫描电子显微镜图片显示，经过离子抛光后表面特征变得更光滑。对经过电解抛光的单晶铜样品进行了类似实验，离子抛光和退火相结合使吸收率从0.97%降至0.89%。
