Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-412 96 Goteborg, Sweden.
Nano Lett. 2010 Mar 10;10(3):953-7. doi: 10.1021/nl903887x.
We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.
我们展示了对单个电子盒（SEB）的交流响应的测量结果。我们施加一个频率大于隧穿率的射频信号，使系统处于非平衡状态。我们观察到 SEB 中的耗散比简单的电路模型所预期的要多得多。我们可以用一种称为西西弗斯电阻的机制来解释这一点。西西弗斯电阻具有很强的栅极依赖性，可用于电测量应用。
