Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan.
Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.
We investigated the effects of post-growth annealing on the photoluminescence (PL) characteristics of InAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD). The onset temperature at which both the peak linewidth and the PL intensity degraded and the blueshift of the ground state emission wavelength occurred was found to depend on both the QD density and the In composition of the capping layer. This behavior is particularly important in view of QD integration in photonic devices. From the knowledge of the dependences of the PL characteristics after annealing on the QD and capping growth conditions, ground state lasing at 1.30 microm could be demonstrated from InAs/GaAs QDs grown by MOCVD. Finally, we compared the laser characteristics of InAs/GaAs QDs with those of InAs/Sb:GaAs QDs, grown according to the antimony-mediated growth technique, and showed that InAs/Sb:GaAs QDs are more appropriate for laser fabrication at 1.3 microm by MOCVD.
我们研究了生长后退火对金属有机化学气相沉积（MOCVD）生长的 InAs/GaAs 量子点（QD）光致发光（PL）特性的影响。发现峰值线宽和 PL 强度降低以及基态发射波长蓝移开始的起始温度既取决于 QD 密度又取决于盖帽层的 In 组成。鉴于在光子器件中集成 QD，这种行为尤为重要。从退火后 PL 特性对 QD 和盖帽生长条件的依赖性可知，通过 MOCVD 生长的 InAs/GaAs QD 可以实现 1.30 微米的基态激光。最后，我们比较了根据锑介导生长技术生长的 InAs/GaAs QD 和 InAs/Sb:GaAs QD 的激光特性，并表明通过 MOCVD，InAs/Sb:GaAs QD 更适合在 1.3 微米处制造激光。
