Department of Electrical and Electronic Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, UK.
Opt Lett. 2010 Feb 15;35(4):469-71. doi: 10.1364/OL.35.000469.
We have designed and fabricated a dual-band resonator in the terahertz frequency range on high-resistivity silicon. The device is designed to show resonances at 2.6 and 4.3 THz using the finite-difference time-domain modeling method. The characteristics of the fabricated device have been examined by using a Fourier-transform IR spectrometer. Measured results are in excellent agreement with the simulated data, showing two polarization-independent resonant peaks observed at 2.60 and 4.37 THz, respectively. The first resonance has a bandwidth of 0.56 THz, while the second one has a bandwidth of 0.70 THz. These dual-band resonant devices can be used for various applications such as dual-band spectral imaging and multiband biosensors.
我们设计并制作了一个在太赫兹频率范围内的高阻硅双频谐振器。该器件使用时域有限差分建模方法设计在 2.6 和 4.3 THz 处产生共振。使用傅里叶变换红外光谱仪对制作的器件的特性进行了测试。测量结果与模拟数据非常吻合，分别在 2.60 和 4.37 THz 处观察到两个偏振无关的共振峰。第一个共振的带宽为 0.56 THz，而第二个共振的带宽为 0.70 THz。这些双频谐振器可用于各种应用，如双频光谱成像和多频生物传感器。
