Guo Jidong, Lindner Ernő
Department of Biomedical Engineering, University of Memphis 330 Engineering Technology, Memphis, TN 38152, USA.
J Electroanal Chem (Lausanne). 2009 Apr 15;629(1-2):180-184. doi: 10.1016/j.jelechem.2009.01.030.
This study focuses on the cyclic voltammetry behavior at shallow recessed microdisc electrode, particularly on the transition from cottrellian behavior to steady state behavior. Diffusion to the inlaid and recessed microdisc electrode is simulated. From the shape of the CVs, for a given radius and potential scan rate, the transition time from planar diffusion to hemispherical diffusion presents a minimum as the recess increases. Theoretical prediction was confirmed by fitting the simulated CVs with experimental results. Dimensionless transition scan rate has been defined and determined by simulation for inlaid and recessed microdisc electrodes.
本研究聚焦于浅凹微盘电极上的循环伏安行为，尤其关注从科特雷尔行为到稳态行为的转变。对嵌入和凹陷微盘电极的扩散进行了模拟。从循环伏安曲线的形状来看，对于给定的半径和电位扫描速率，随着凹陷增加，从平面扩散到半球形扩散的转变时间呈现出最小值。通过将模拟的循环伏安曲线与实验结果拟合，证实了理论预测。定义了无量纲转变扫描速率，并通过对嵌入和凹陷微盘电极的模拟来确定。
