Centre for Nanoporous Materials, School of Chemistry, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
Inorg Chem. 2010 Mar 15;49(6):2656-66. doi: 10.1021/ic901651d.
Three new gallium diphosphonates: Ga(3)(OH)(O(3)PC(3)H(6)PO(3))(2) (1), Ga(4)(O(3)PC(5)H(10)PO(3))(3)(C(5)H(5)N)(2) (2), and Ga(HO(3)PC(10)H(20)PO(3)) (3), in which the diphosphonate bridging ligands have 3, 5, and 10 methylene units, respectively, have been synthesized using solvothermal methods and their structures determined using single-crystal laboratory and synchrotron X-ray diffraction data. All three materials contain Ga-centered tetrahedra and octahedra linked together through the -PO(3) groups of the diphosphonate ligands to form two-dimensional pillared slab (1) and three-dimensional pillared (2 and 3) materials. Compound 1 contains bridging hydroxide anions that connect Ga-centered octahedra and tetrahedra, and contains pillared slabs in which one side of the Ga-P-O/OH/CH hybrid layers are connected by the propylenediphosphonate groups only. This slab also contains propylenediphosphonate groups arranged orthogonally to the pillaring direction in the outermost layer of the Ga-P-O/OH/CH hybrid layers. Compound 2 is a framework structure that contains framework pyridine molecules between alternate layers of diphosphonate-pillared Ga-P-O layers and is structurally stable to loss of 1 equiv of pyridine molecules from the structure. Compound 3 is a partially condensed pillared framework structure with one P-O-H bond per diphosphonate group remaining in the resulting material. The structural changes observed as the alkylene chain in the diphosphonate ligand is increased in these compounds is compared to other members of the gallium diphosphonate family synthesized in a similar manner, and other metal diphosphonate series, to gain some general oversight of the structural trends observed in series of metal diphosphonate materials in which the alkylene chain length is varied systematically.
Ga(3)(OH)(O(3)PC(3)H(6)PO(3))(2) (1)、Ga(4)(O(3)PC(5)H(10)PO(3))(3)(C(5)H(5)N)(2) (2)和 Ga(HO(3)PC(10)H(20)PO(3)) (3),其中双膦酸根基团分别具有 3、5 和 10 个亚甲基单元,是通过溶剂热方法合成的,并通过单晶实验室和同步辐射 X 射线衍射数据确定了它们的结构。这三种材料都包含 Ga 为中心的四面体和八面体,通过双膦酸根基团的 -PO(3)基团连接在一起,形成二维支柱板(1)和三维支柱(2 和 3)材料。化合物 1 含有桥连的氢氧根阴离子,连接 Ga 为中心的八面体和四面体,并包含支柱板,其中 Ga-P-O/OH/CH 杂化层的一侧仅通过丙烯二膦酸根基团连接。该板还包含在 Ga-P-O/OH/CH 杂化层的最外层中与支柱方向正交排列的丙烯二膦酸根基团。化合物 2 是一种骨架结构,在交替的双膦酸根支柱 Ga-P-O 层之间含有骨架吡啶分子,并且在结构上稳定,从结构中损失 1 当量的吡啶分子。化合物 3 是一种部分缩合的支柱骨架结构,每个双膦酸根基团保留一个 P-O-H 键。与以类似方式合成的其他镓双膦酸盐家族成员以及其他金属双膦酸盐系列相比,观察到这些化合物中双膦酸根基团的亚烷基链增加时的结构变化,以获得对系统改变亚烷基链长度的金属双膦酸盐材料系列中观察到的结构趋势的一些总体了解。