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1
Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
Nanotechnology. 2010 Mar 19;21(11):115401. doi: 10.1088/0957-4484/21/11/115401. Epub 2010 Feb 22.
2
Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.
Nanotechnology. 2011 Jan 28;22(4):045202. doi: 10.1088/0957-4484/22/4/045202. Epub 2010 Dec 15.
3
Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods.
Sci Rep. 2018 May 25;8(1):8124. doi: 10.1038/s41598-018-26642-8.
4
Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.
Nanotechnology. 2010 Apr 2;21(13):134026. doi: 10.1088/0957-4484/21/13/134026. Epub 2010 Mar 8.
7
Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods.
Nanotechnology. 2011 Jul 1;22(26):265202. doi: 10.1088/0957-4484/22/26/265202. Epub 2011 May 17.
8
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells.
Nanotechnology. 2010 Jul 30;21(30):305201. doi: 10.1088/0957-4484/21/30/305201. Epub 2010 Jul 6.
9
Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy.
Nanotechnology. 2010 May 14;21(19):195202. doi: 10.1088/0957-4484/21/19/195202. Epub 2010 Apr 19.

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