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在 GaN 纳米棒上外延生长的 InGaN/GaN 多量子盘的量子限制斯塔克效应。

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.

机构信息

Quantum Functional Semiconductor Research Center, Department of Physics, Dongguk University, Seoul, Korea.

出版信息

Nanotechnology. 2010 Mar 19;21(11):115401. doi: 10.1088/0957-4484/21/11/115401. Epub 2010 Feb 22.

Abstract

We have investigated, using micro-photoluminescence, the quantum confined Stark effect in an In(x)Ga(1-x)N/GaN multi-quantum disk structure at the tip of a single GaN nanorod. A strong and sharp emission line from the In(x)Ga(1-x)N/GaN quantum disks near 3.26 eV was observed. The peak energy of the emission line was observed to blue-shift with increasing excitation power, indicating a quantum confined Stark effect. Furthermore, both the blue-shift and the intensity of the emission saturate with increasing excitation power. The temperature-dependence of the 3.26 eV emission line has also been investigated.

摘要

我们利用微光致发光研究了单个 GaN 纳米棒尖端的 In(x)Ga(1-x)N/GaN 多量子盘结构中的量子限制斯塔克效应。观察到来自 In(x)Ga(1-x)N/GaN 量子盘的强而尖锐的 3.26 eV 附近的发射线。随着激发功率的增加,发射线的峰值能量观察到蓝移,表明存在量子限制斯塔克效应。此外,发射的蓝移和强度都随着激发功率的增加而饱和。还研究了 3.26 eV 发射线的温度依赖性。

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