基于掩模和催化剂自由生长的 N 极性 GaN 纳米棒的发光二极管。
Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods.
机构信息
Institute of Solid State Physics-Semiconductor Epitaxy-University of Bremen, Bremen, Germany.
出版信息
Nanotechnology. 2011 Jul 1;22(26):265202. doi: 10.1088/0957-4484/22/26/265202. Epub 2011 May 17.
We report on the fabrication of a light-emitting diode based on GaN nanorods containing InGaN quantum wells. The unique system consists of tilted N-polar nanorods of high crystalline quality. Photoluminescence, electroluminescence, and spatially resolved cathodoluminescence investigations consistently show quantum well emission around 2.6 eV. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements reveal a truncated shape of the quantum wells with In contents of (15 ± 5)%.
我们报告了一种基于含有 InGaN 量子阱的 GaN 纳米棒的发光二极管的制造。该独特系统由高晶体质量的倾斜 N 极性纳米棒组成。光致发光、电致发光和空间分辨阴极发光研究一致表明，量子阱发射约 2.6eV。扫描透射电子显微镜和能量色散 X 射线光谱测量表明，量子阱具有（15±5）%的 In 含量，呈截断形状。
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