Nano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon, Korea.
Nanotechnology. 2010 Mar 19;21(11):115205. doi: 10.1088/0957-4484/21/11/115205. Epub 2010 Feb 22.
A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.
一种氧化锌纳米线（ZnO NW）嵌入肖特基二极管被制造用于紫外光探测。两种器件被制备。氧化锌纳米线分别被置于不对称金属电极（Al 和 Pt）用于肖特基器件，或者置于对称金属电极（Al 和 Al）用于欧姆器件。肖特基器件提供整流电流，并且比欧姆器件对紫外光照射更敏感。肖特基势垒通过紫外诱导势垒降低效应对于紫外光探测起重要作用。基于紫外光诱导肖特基势垒降低效应，讨论了 ZnO NW 嵌入肖特基二极管的制备和紫外光反应机制。
