Chen Tse-Pu, Young Sheng-Joue, Chang Shoou-Jinn, Hsiao Chih-Hung, Hsu Yu-Jung
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 701, Taiwan.
Nanoscale Res Lett. 2012 Apr 12;7(1):214. doi: 10.1186/1556-276X-7-214.
The authors report the fabrication and I-V characteristics of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate. From field-emission scanning electron microscopy and X-ray diffraction spectrum, ZnO nanorods had a (0002) crystal orientation and a wurtzite hexagonal structure. During the I-V and response measurement, the flexible substrates were measured with (i.e., the radius of curvatures was 0.2 cm) and without bending. From I-V results, the dark current decreased, and the UV-to-visible rejection ratio increased slightly in bending situation. The decreasing tendency of the dark current under bending condition may be attributed to the increase of the Schottky barrier height.
作者报告了在柔性聚酰亚胺衬底上制备的ZnO纳米棒金属-半导体-金属光电探测器及其电流-电压特性。通过场发射扫描电子显微镜和X射线衍射光谱可知，ZnO纳米棒具有(0002)晶体取向和纤锌矿六方结构。在电流-电压和响应测量过程中，对柔性衬底进行了弯曲（即曲率半径为0.2厘米）和未弯曲状态下的测量。从电流-电压结果来看，在弯曲情况下暗电流减小，紫外-可见抑制比略有增加。弯曲条件下暗电流的下降趋势可能归因于肖特基势垒高度的增加。
