基于硅锗异质结双极晶体管结构的短波光调制器设计。

Design of a short electro-optic modulator based on SiGe HBT structure.

作者信息

Deng Shengling, Neogi Tuhin G, Novak Joseph, McDonald John, Huang Rena

机构信息

Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, USA.

出版信息

Opt Express. 2010 Feb 1;18(3):1994-2001. doi: 10.1364/OE.18.001994.

DOI:10.1364/OE.18.001994

PMID:20174029

Abstract

A SiGe electro-optic modulator operating at wavelength of 1.55 microm is proposed. The "ON" state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a pi phase shift is 73.6 microm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9 ps and 24.5 ps, respectively.

摘要

提出了一种工作在1.55微米波长的硅锗电光调制器。“开”状态电压设定为1.4伏。产生π相移所需的马赫曾德尔干涉仪（MZI）波导臂长为73.6微米，总衰减损耗为3.95分贝。上升和下降延迟时间分别为70.9皮秒和24.5皮秒。