下一代1.5微米太赫兹天线：InGaAs/InAlAs光电导层的台面结构
Next generation 1.5 microm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers.
作者信息
Roehle H, Dietz R J B, Hensel H J, Böttcher J, Künzel H, Stanze D, Schell M, Sartorius B
机构信息
Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany.
出版信息
Opt Express. 2010 Feb 1;18(3):2296-301. doi: 10.1364/OE.18.002296.
Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 microm operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity.
采用化学辅助离子束蚀刻（CAIBE）工艺对InGaAs/InAlAs光电导层进行台面结构化处理。制作了用于1.5微米工作的太赫兹光电导天线，并在时域光谱仪中进行了评估。在发射极功率、暗电流和接收器灵敏度方面，与平面天线相比有数量级的提升。
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