Department of Chemistry, University of California, Riverside, California 92521, USA.
J Am Chem Soc. 2010 Mar 17;132(10):3283-5. doi: 10.1021/ja9100672.
A Cu-In-S semiconductor consisting of a single piece of a super-supertetrahedron of infinite order has been synthesized through the self-assembly of the largest known Cu-In-S T(5) supertetrahedral cluster. One of the most fascinating structural features of this material is its dual hierarchical architecture. Its open-framework architecture can be considered as a "hollowed-out" cubic ZnS-type structure with exactly 64.8% of the total of 1000 atoms in the 5 x 5 x 5 zinc blende supercell removed. The synthetic realization of this material serves to demonstrate a new method for property engineering of semiconducting materials.
一种由单个无限阶超超四面体组成的 Cu-In-S 半导体已通过最大已知的 Cu-In-S T(5)超四面体簇的自组装合成。该材料最吸引人的结构特征之一是其双重层次结构。其开放式骨架结构可被视为“掏空”的立方 ZnS 型结构，5 x 5 x 5 闪锌矿超胞中总共 1000 个原子中有 64.8%被去除。该材料的合成实现证明了一种用于半导体材料性能工程的新方法。
