Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
Nano Lett. 2010 Apr 14;10(4):1125-31. doi: 10.1021/nl9032318.
We demonstrate the fabrication of nanoperforated graphene materials with sub-20-nm features using cylinder-forming diblock copolymer templates across >1 mm(2) areas. Hexagonal arrays of holes are etched into graphene membranes, and the remaining constrictions between holes interconnect forming a honeycomb structure. Quantum confinement, disorder, and localization effects modulate the electronic structure, opening an effective energy gap of 100 meV in the nanopatterned material. The field-effect conductivity can be modulated by 40x (200x) at room temperature (T = 105 K) as a result. A room temperature hole mobility of 1 cm(2) V(-1) s(-1) was measured in the fabricated nanoperforated graphene field effect transistors. This scalable strategy for modulating the electronic structure of graphene is expected to facilitate applications of graphene in electronics, optoelectronics, and sensing.
我们展示了使用圆柱形成嵌段共聚物模板在 >1mm(2) 面积上制造具有亚 20nm 特征的纳米穿孔石墨烯材料的方法。在石墨烯膜上刻蚀出六边形孔阵列，孔之间的剩余连接形成蜂窝状结构。量子限制、无序和局域化效应对电子结构进行调制，在纳米图案化材料中打开了 100meV 的有效能隙。结果，在室温下（T=105K），场效应电导率可以调制 40x（200x）。在制造的纳米穿孔石墨烯场效应晶体管中测量到的室温孔迁移率为 1cm(2)V(-1)s(-1)。这种用于调节石墨烯电子结构的可扩展策略有望促进石墨烯在电子学、光电学和传感中的应用。
