Koppinen P J, Lievonen J T, Ahlskog M, Maasilta I J
Department of Physics, Nanoscience Center, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä, Finland.
Rev Sci Instrum. 2010 Feb;81(2):023901. doi: 10.1063/1.3298582.
We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlO(x) barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an atomic force microscope tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed up to a value of 37. This facilitates local static strain variation measurements down to approximately 10(-7). This type of strain sensor could have applications in nanoelectromechanical systems used in displacement, force, and mass sensing, for example.
我们展示了一种基于具有AlO(x)势垒的金属铝隧道结的纳米结构局部应变传感方法。这些结被制备在薄氮化硅膜的顶部，该膜由附着在刚性悬臂上的原子力显微镜尖端驱动。观察到隧穿电阻随施加应变的大幅相对变化（应变系数），其值高达37。这有助于进行低至约10^(-7)的局部静态应变变化测量。例如，这种类型的应变传感器可应用于用于位移、力和质量传感的纳米机电系统中。
