Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland.
Opt Lett. 2010 Mar 1;35(5):694-6. doi: 10.1364/OL.35.000694.
We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry.
我们展示了一种使用外延生长在单片 GaAs/AlAs 分布布拉格反射器上的 39 层 Stranski-Krastanov InGaAs 量子点自组装的光泵浦半导体盘激光器。增益结构与腔内金刚石晶体热扩散器结合，允许在盘激光几何结构中以 1180nm 的波长以圆形光束形状在单横模（M(2)<1.2）下输出 1.75W 的功率。
