在 1180nm 处运转的光泵浦半导体量子点盘式激光器。

Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.

机构信息

Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland.

出版信息

Opt Lett. 2010 Mar 1;35(5):694-6. doi: 10.1364/OL.35.000694.

DOI:10.1364/OL.35.000694

PMID:20195322

Abstract

We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry.

摘要

我们展示了一种使用外延生长在单片 GaAs/AlAs 分布布拉格反射器上的 39 层 Stranski-Krastanov InGaAs 量子点自组装的光泵浦半导体盘激光器。增益结构与腔内金刚石晶体热扩散器结合，允许在盘激光几何结构中以 1180nm 的波长以圆形光束形状在单横模（M(2)<1.2）下输出 1.75W 的功率。