School of Chemistry, Tel-Aviv University, Tel Aviv, Israel.
Nano Lett. 2010 Apr 14;10(4):1202-8. doi: 10.1021/nl903560u.
The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is, nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm(2).
在固体基底上的空间限定位置处，以受控且均匀的取向和密度大规模组装纳米线元件，是在实际电子应用中实现其集成所面临的最重大挑战之一。在这里，我们提出了一种基于纳米线元件原位可控平面化的通用“击倒”方法，用于形成大规模有序纳米线阵列。通过使用适当的弹性体覆盖的刚性辊装置，可以实现纳米线的受控平面化。在被击倒之后，通过简单的单次光刻步骤，可以轻松地对阵列中的每个纳米线进行电寻址，从而以空前的高保真度率产生大量纳米电子器件。该方法允许仅通过两个简单的步骤来控制所有可能的阵列参数，即纳米线的尺寸、化学成分、取向和密度。所得的击倒阵列可进一步用于创建大规模的纳米电子器件阵列。已经在面积为 10 平方厘米（2）或更大的衬底上制造了超过 100 万个器件，并且产量超过 98%。
