Fan Zhiyong, Ho Johnny C, Jacobson Zachery A, Yerushalmi Roie, Alley Robert L, Razavi Haleh, Javey Ali
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
Nano Lett. 2008 Jan;8(1):20-5. doi: 10.1021/nl071626r. Epub 2007 Aug 16.
Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability presents one of the significant bottleneck challenges facing the integration of nanowires for electronic applications. Here, we demonstrate wafer-scale assembly of highly ordered, dense, and regular arrays of NWs with high uniformity and reproducibility through a simple contact printing process. The assembled NW pitch is shown to be readily modulated through the surface chemical treatment of the receiver substrate, with the highest density approaching approximately 8 NW/mum, approximately 95% directional alignment, and wafer-scale uniformity. Such fine control in the assembly is attained by applying a lubricant during the contact printing process which significantly minimizes the NW-NW mechanical interactions, therefore enabling well-controlled transfer of nanowires through surface chemical binding interactions. Furthermore, we demonstrate that our printing approach enables large-scale integration of NW arrays for various device structures on both rigid silicon and flexible plastic substrates, with a controlled semiconductor channel width ranging from a single NW ( approximately 10 nm) up to approximately 250 microm, consisting of a parallel array of over 1250 NWs and delivering over 1 mA of ON current.
“自下而上”的纳米线（NW）材料的可控且均匀组装以及高可扩展性，是纳米线集成用于电子应用所面临的重大瓶颈挑战之一。在此，我们通过一种简单的接触印刷工艺，展示了具有高度均匀性和可重复性的、高度有序、密集且规则的纳米线阵列的晶圆级组装。通过对接收基板进行表面化学处理，可轻松调节组装的纳米线间距，最高密度接近约8根纳米线/微米，定向排列率约为95%，且具有晶圆级均匀性。在接触印刷过程中施加润滑剂，可显著减少纳米线与纳米线之间的机械相互作用，从而通过表面化学结合相互作用实现对纳米线转移的良好控制，进而实现对组装的精细控制。此外，我们证明，我们的印刷方法能够在刚性硅和柔性塑料基板上，针对各种器件结构实现纳米线阵列的大规模集成，可控的半导体沟道宽度范围从单根纳米线（约10纳米）到约250微米，由超过1250根纳米线的平行阵列组成，导通电流超过1毫安。
