Shelton J C, Reinhart F K, Logan R A
Appl Opt. 1978 Aug 15;17(16):2548-55. doi: 10.1364/AO.17.002548.
Low-loss (1.4-cm(-1)) single-mode rib waveguides in Al(x)Ga(1-x)As heterostructures are fabricated by liquid phase epitaxy, double anodization, and photolithographic techniques. Switching of optical channels between adjacent waveguides is accomplished with directional coupler switches controlled with electrodes laid over an isolating dielectric, making a metal-oxide-semiconductor (MOS) configuration. Complete switching is achieved with <20 V applied to a stepped Deltabetareversal electrode configuration. A 2 x 4 switching matrix with low-loss lateral offsets of the waveguides is demonstrated. By laying out several optical switching and guiding experiments within a 128-mum stripe, we show that independent optical circuits can be packed with adequate optical isolation using centerline separations approximately 10 microm.
通过液相外延、双阳极氧化和光刻技术，在Al(x)Ga(1 - x)As异质结构中制备了低损耗（1.4厘米⁻¹）单模肋形波导。相邻波导之间的光通道切换是通过由置于隔离电介质上的电极控制的定向耦合器开关实现的，形成金属氧化物半导体（MOS）结构。通过向阶梯式Δβ反转电极配置施加<20 V电压可实现完全切换。展示了具有低损耗波导横向偏移的2×4开关矩阵。通过在128微米宽的条带内进行多个光开关和光导实验，我们表明使用约10微米的中心线间距可以在有足够光隔离的情况下密集排列独立的光路。
