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(铝,镓)砷化物/砷化镓多量子阱平面波导的光学特性以及通过反应离子刻蚀制备单模脊形波导和定向耦合器

Optical properties of (Al,Ga)As/GaAs multiple quantum well planar waveguides and the fabrication of single-mode rib waveguides and directional couplers by reactive ion etching.

作者信息

Macbean M D, Mikami O, Wilkinson C D, Mistry P, Roberts J S

出版信息

Appl Opt. 1987 Jul 1;26(13):2625-30. doi: 10.1364/AO.26.002625.

Abstract

An anisotropic absorption edge was observed in an (Al,Ga)As/GaAs multiple quantum well double-heterostructure (MQW-DH) single-mode planar optical waveguide. Single-mode rib waveguides and directional couplers were fabricated by SiCl(4) reactive ion etching. The results were found to be consistent with the assumption that the refractive index of the MQW structure for TE propagation is given by the weighted rms average value of the refractive indices of the constituent layers.

摘要

在一个(铝,镓)砷/砷化镓多量子阱双异质结构(MQW - DH)单模平面光波导中观察到了各向异性吸收边。通过四氯化硅反应离子蚀刻制造了单模脊形波导和定向耦合器。结果发现与以下假设一致,即对于TE传播,MQW结构的折射率由组成层折射率的加权均方根平均值给出。

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